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[BK] [8/10] CMOS Terahertz Electronics for High-Resolution Stand-off Active Imaging

작성일

2023.08.07

작성자

전기전자공학부

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Y-BASE 지능정보교육연구사업단 최우영 교수님께서 아래와 같이 초청세미나를 개최하오니, 많은 참석을 부탁드립니다.

◎ 일시 : 2023. 08. 10 (목) 오후 4시

◎ 장소 :  연세대학교 제3공학관 C616호

◎ 제목 : CMOS Terahertz Electronics for High-Resolution Stand-off Active Imaging

 

◎ 연사 : Prof. 최우열 / 서울대학교

◎ 초청 : 전기전자공학과 최우영 교수

◎ 초록 : Terahertz waves (THz) represent electromagnetic waves with frequencies ranging from 300 GHz to 10 THz. Thanks to the sub-mm wavelength, THz imaging provides higher resolution than that of millimeter-wave (30 GHz to 300 GHz), while maintaining the ability to see through non-conductive materials and harsh weather conditions. If developed, camera-like active THz imagers can be employed in security, automotive and industrial applications. Since Si-based integrated circuit technologies offer high-yield fabrication, large-scale integration, and large-volume production capabilities, Si-based THz electronics can be one of the key enablers for such applications.

 In this seminar, recent progress in CMOS THz electronics for high-resolution reflection-mode active imaging will be presented. To realize camera-like reflection-mode active imaging, transmitter and receiver functions should be integrated into a compact pixel, that can eventually form large-scale 2-dimensional arrays. We demonstrated that it is possible to integrate transceiver functions including a shared on-chip antenna into a pixel with a compact area close to half wavelength square at ~260 GHz using a 65-nm Si CMOS technology. The pixel employs an injection-locked oscillator that doubles as a transmitter and an LO, performing 10-dB better sensitivity compared to receiver-only pixels. The transceiver pixel concept is also realized in a pixel and an array at ~430 GHz. By combining the 430-GHz array with a 6-cm Cassegrain reflector, imaging at 3 m with the 0.7-degree angular resolution is demonstrated.