| 2023-09 |
Catalytic nickel silicide as an alternative to noble metals in metal-assisted chemical etching of silicon |
Nanoscale
|
| 2023-08 |
Heterostructured Mo<sub>2</sub>N–Mo<sub>2</sub>C Nanoparticles Coupled with N‐Doped Carbonized Wood to Accelerate the Hydrogen Evolution Reaction |
Small Structures
|
| 2023-06 |
Three-dimensional multimodal porous graphene-carbonized wood for highly efficient solar steam generation |
Sustainable Energy Technologies and Assessments
|
| 2022-11 |
Energy band offsets of BeO dielectrics grown via atomic-layer deposition on β-Ga2O3 substrates |
JOURNAL OF ALLOYS AND COMPOUNDS
|
| 2022-10 |
Polarization-Induced Two-Dimensional electron gas at BeO/ZnO interface |
APPLIED SURFACE SCIENCE
|
| 2022-06 |
Phase-engineering terraced structure of edge-rich α-Mo2C for efficient hydrogen evolution reaction |
Materials Today Energy
|
| 2022-01 |
Low Temperature Growth of Beryllium Oxide Thin Films Prepared via Plasma Enhanced Atomic Layer Deposition |
APPLIED SURFACE SCIENCE
|
| 2021-11 |
Fully wood-based green triboelectric nanogenerators |
APPLIED SURFACE SCIENCE
|
| 2020-12 |
Mesoporous ZnCo<inf>2</inf>O<inf>4</inf> nanowire arrays with oxygen vacancies and N-dopants for significant improvement of non-enzymatic glucose detection |
JOURNAL OF ELECTROANALYTICAL CHEMISTRY
|
| 2020-12 |
Chemical carving lithography with scanning catalytic probes |
SCIENTIFIC REPORTS
|
| 2020-12 |
Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs |
SCIENTIFIC REPORTS
|
| 2020-11 |
Enhanced photoelectrochemical efficiency and stability using nitrogen-doped TiO<inf>2</inf> on a GaAs photoanode |
JOURNAL OF ALLOYS AND COMPOUNDS
|
| 2020-08 |
Ultralow Optical and Electrical Losses via Metal-Assisted Chemical Etching of Antireflective Nanograss in Conductive Mesh Electrodes |
ADVANCED OPTICAL MATERIALS
|
| 2020-07 |
Three-dimensional porous stretchable supercapacitor with wavy structured PEDOT:PSS/graphene electrode |
CHEMICAL ENGINEERING JOURNAL
|
| 2020-03 |
Electrochemical local etching of silicon in etchant vapor |
NANOSCALE
|
| 2020-03 |
Band alignment of BeO gate dielectric grown by atomic-layer deposition on AlGaN/GaN HEMTs |
APPLIED SURFACE SCIENCE
|
| 2020-01 |
Improved reduction of contact resistance in NiSi/Si junction using Holmium interlayer |
MICROELECTRONIC ENGINEERING
|
| 2020-01 |
Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
SOLID-STATE ELECTRONICS
|
| 2019-12 |
Interplay of strain and intermixing effects on direct-bandgap optical transition in strained Ge-on-Si under thermal annealing |
SCIENTIFIC REPORTS
|
| 2019-11 |
Anodic Imprint Lithography: Direct Imprinting of Single Crystalline GaAs with Anodic Stamp |
ACS NANO
|
| 2019-11 |
Crystal Properties of Atomic-Layer Deposited Beryllium Oxide on Crystal and Amorphous Substrates |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2019-09 |
Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors |
APPLIED PHYSICS LETTERS
|
| 2019-08 |
Subwavelength photocathodes via metal-assisted chemical etching of GaAs for solar hydrogen generation |
NANOSCALE
|
| 2019-08 |
Critical role of thulium metal interlayer in ultra-low contact resistance reduction in Ni-InGaAs/n-InGaAs for n-MOSFETs |
VACUUM
|
| 2019-06 |
Nickel film deposition with varying RF power for the reduction of contact resistance in NiSi |
Coatings
|
| 2019-06 |
Domain epitaxy of crystalline BeO films on GaN and ZnO substrates |
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
|
| 2019-06 |
Crystalline beryllium oxide on Si (100) deposited using E-beam evaporator and thermal oxidation |
APPLIED SURFACE SCIENCE
|
| 2019-04 |
Crystalline BeO grown on 4H-SiC via atomic layer deposition: Band alignment and interface defects |
ACS Applied Electronic Materials
|
| 2019-04 |
Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching |
ACS APPLIED MATERIALS & INTERFACES
|
| 2019-03 |
Atomic-layer deposition of crystalline BeO on SiC |
APPLIED SURFACE SCIENCE
|
| 2019-01 |
Evaluation of Electroless Pt Deposition and Electron Beam Pt Evaporation on p-GaAs as a Photocathode for Hydrogen Evolution |
ACS Applied Energy Materials
|
| 2019-01 |
An efficient amplification strategy for N-doped NiCo <inf>2</inf> O <inf>4</inf> with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis |
JOURNAL OF MATERIALS CHEMISTRY A
|
| 2018-09 |
Remarkable Enhancement of Electrochemical Performance by the Oxygen Vacancy and Nitrogen Doping in ZnCo2O4 Nanowire Arrays |
ACS Applied Energy Materials
|
| 2018-09 |
SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors |
RESULTS IN PHYSICS
|
| 2018-07 |
Tb/Ni/TiN Stack for Ultralow Contact Resistive Ni-Tb-InGaAs Alloy to n-In0.53Ga0.47As Layer |
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
|
| 2018-06 |
Reducing Contact Resistance Between Ni-InGaAs and n-In0.53Ga0.47As using Sn Interlayer in n-In0.53Ga0.47As MOSFETs |
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
|
| 2018-01 |
Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2018-01 |
Chemical Imprinting of Crystalline Silicon with Catalytic Metal Stamp in Etch Bath |
ACS NANO
|
| 2017-12 |
Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates |
ACS APPLIED MATERIALS & INTERFACES
|
| 2017-11 |
Three-Dimensional Flexible All-Organic Conductors for Multifunctional Wearable Applications |
ACS APPLIED MATERIALS & INTERFACES
|
| 2017-11 |
3D Highly Conductive Silver Nanowire@PEDOT:PSS Composite Sponges for Flexible Conductors and Their All-Solid-State Supercapacitor Applications |
ADVANCED MATERIALS INTERFACES
|
| 2017-10 |
Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic Layer Deposited Beryllium Oxide |
SCIENTIFIC REPORTS
|
| 2017-10 |
Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers |
OPTICS EXPRESS
|
| 2017-08 |
Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs |
OPTICS LETTERS
|
| 2017-08 |
Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric |
IEEE ELECTRON DEVICE LETTERS
|
| 2017-05 |
Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon |
ACS Omega
|
| 2017-04 |
Reduction of contact resistance between Ni-InGaAs and n-InGaAs by Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf> interlayer |
APPLIED PHYSICS EXPRESS
|
| 2017-04 |
Contact Resistance Reduction between Ni?InGaAs and n-InGaAs via Rapid Thermal Annealing in Hydrogen Atmosphere |
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
|
| 2017-04 |
AlGaN/GaN-on-Si Power FET with Mo/Au Gate |
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
|
| 2017-04 |
A Study on Thermal Stability Improvement in Ni Germanide/p-Ge using Co interlayer for Ge MOSFETs |
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
|
| 2017-03 |
Evaluation of titanium disilicide/copper Schottky gate for AlGaN/GaN high electron mobility transistors |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2017-01 |
Three-Dimensional Hierarchically Mesoporous ZnCo<inf>2</inf>O<inf>4</inf> Nanowires Grown on Graphene/Sponge Foam for High-Performance, Flexible, All-Solid-State Supercapacitors |
CHEMISTRY-A EUROPEAN JOURNAL
|
| 2016-10 |
Nano/micro double texturing of antireflective subwavelength structures on inverted pyramids |
SOLAR ENERGY
|
| 2016-09 |
Phosphorus implantation into in situ doped Ge-on-Si for high light-emitting efficiency |
OPTICAL MATERIALS EXPRESS
|
| 2016-09 |
Lateral photovoltaic effect in flexible free-standing reduced graphene oxide film for self-powered position-sensitive detection |
SCIENTIFIC REPORTS
|
| 2016-05 |
Thermally induced tensile strain of epitaxial Ge layers grown by a two-step e-beam evaporation process on Si substrates |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2016-04 |
A Study on Contact Resistance Reduction in Ni Germanide/Ge using Sb Interlayer |
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
|
| 2016-03 |
Localized TiSi and TiN phases in Si/Ti/Al/Cu Ohmic contacts to AlGaN/GaN heterostructures |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
| 2016-02 |
Interfacial AN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors |
MICROELECTRONIC ENGINEERING
|
| 2016-01 |
Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching |
SOLAR ENERGY MATERIALS AND SOLAR CELLS
|
| 2015-12 |
The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs |
SOLID-STATE ELECTRONICS
|
| 2015-12 |
Highly Elastic and Conductive N-Doped Monolithic Graphene Aerogels for Multifunctional Applications |
ADVANCED FUNCTIONAL MATERIALS
|
| 2015-08 |
Microstructural characterization of Au-free Si/Ti/Al/Cu ohmic contacts in an AlGaN/GaN heterostructure |
THIN SOLID FILMS
|
| 2015-05 |
Catalyst feature independent metal-assisted chemical etching of silicon |
RSC ADVANCES
|
| 2015-04 |
Au-free Si MOS compatible Ni/Ge/Al ohmic contacts to n(+)-InGaAs |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
| 2015-02 |
A Study of the Dependence of Effective Schottky Barrier Height in Ni Silicide/n-Si on the Thickness of the Antimony Interlayer for High Performance n-channel MOSFETs |
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
|
| 2015-01 |
Controlled Tensile Strain of Ge Films Hetero-Epitaxially Grown on Si Substrates Using E-Beam Evaporator |
ECS SOLID STATE LETTERS
|
| 2014-12 |
Thermally driven metal-assisted chemical etching of GaAs with in-position and out-of-position catalyst |
JOURNAL OF MATERIALS CHEMISTRY A
|
| 2014-08 |
In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs |
JOURNAL OF MATERIALS CHEMISTRY A
|
| 2014-03 |
Ge metal oxide semiconductor field effect transistors with optimized Si cap and HfSiO2 high-k metal gate stacks |
CURRENT APPLIED PHYSICS
|
| 2013-12 |
Reliability study of methods to suppress boron transient enhanced diffusion in high-k/metal gate Si/SiGe channel pMOSFETs |
Microelectronic Engineering
|
| 2013-11 |
Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors |
APPLIED PHYSICS LETTERS
|
| 2012-12 |
A study of capping layers for sulfur monolayer doping on III-V junctions |
APPLIED PHYSICS LETTERS
|
| 2012-10 |
Interfacial and electrical properties of HfO2 gate dielectrics grown on GaAs by atomic layer deposition using different oxidants |
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
| 2012-09 |
Quantification of interfacial state density (D-it) at the high-k/III-V interface based on Hall effect measurements |
JOURNAL OF APPLIED PHYSICS
|
| 2012-09 |
High mobility CMOS transistors on Si/SiGe heterostructure channels |
Microelectronic Engineering
|
| 2012-07 |
Thermally Robust Ni Germanide Technology Using Cosputtering of Ni and Pt for High-Performance Nanoscale Ge MOSFETs |
IEEE TRANSACTIONS ON NANOTECHNOLOGY
|
| 2012-02 |
Improvement of Thermal Stability of Ni-Germanide with Ni/Co/Ni/TiN Structure for High Performance Ge Metal-Oxide-Semiconductor Field Effect Transistors |
JAPANESE JOURNAL OF APPLIED PHYSICS
|
| 2012-01 |
Theoretical approach to evaluating beryllium oxide as a gate dielectric considering electromagnetics and thermal stability |
APPLIED PHYSICS LETTERS
|
| 2011-12 |
Characterization of device performance and reliability of high performance Ge-on-Si field-effect transistor |
Microelectronic Engineering
|
| 2011-10 |
Process driven oxygen redistribution and control in Si(0.7)Ge(0.3)/HfO(2)/TaN gate stack film systems |
JOURNAL OF APPLIED PHYSICS
|
| 2011-10 |
Comparison of Ohmic contact resistances of n- and p-type Ge source/drain and their impact on transport characteristics of Ge metal oxide semiconductor field effect transistors |
THIN SOLID FILMS
|
| 2011-09 |
Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2011-07 |
Thermal Endurance and Microstructural Evolution of PtGe for High-Performance Nano-Scale Ge-on-Si MOSFETs |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
| 2011-05 |
High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility |
IEICE TRANSACTIONS ON ELECTRONICS
|
| 2011-04 |
ON-State Performance Enhancement and Channel-Direction-Dependent Performance of a Biaxial Compressive Strained Si(0.5)Ge(0.5) Quantum-Well pMOSFET Along < 110 > and < 100 > Channel Directions |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
| 2011-01 |
Highly scaled (L(g) similar to 56 nm) gate-last Si tunnel field-effect transistors with I(ON) > 100 mu A/mu m |
SOLID-STATE ELECTRONICS
|
| 2010-11 |
Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance Si1-xGex pMOSFETs With High-k/Metal Gate Stacks |
IEEE ELECTRON DEVICE LETTERS
|
| 2010-11 |
High-Mobility TaN/Al(2)O(3)/Ge(111) n-MOSFETs With RTO-Grown Passivation Layer |
IEEE ELECTRON DEVICE LETTERS
|
| 2010-10 |
The Effect of a Si Capping Layer on RF Characteristics of High-k/Metal Gate SiGe Channel pMOSFETs |
IEEE ELECTRON DEVICE LETTERS
|
| 2010-09 |
Thermal desorption of Ge native oxides and loss of Ge from the surface |
Materials Science In Semiconductor Processing
|