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세미나 [03/08] Low-Noise Imaging Techniques for CMOS Image Sensors
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2016.03.03
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< BK21 플러스 BEST 정보기술 사업단 세미나 개최 안내 >

 


개최일시 : 2016 03 08일 화요일 11:00 ~ 12:00

개최장소 : 2공학관 B701

세미나 제목 : Low-Noise Imaging Techniques for CMOS Image Sensors

발표초록 :

The low light-level imaging techniques have applications in many diverse scientific and industrial fields. Particularly, the realization of low noise imaging devices less than 0.3 electrons offers photon counting solutions in a wide range of application areas such as surveillance, microscopy, and other bio-medical imaging, those require both photon-counting-level sensitivity and sufficient dynamic range. To do this, the various low-noise techniques, e.g., noise-robust readout circuitry, low noise pixels and so on, have been developed and reported. In this seminar, a low temporal read noise and high conversion gain reset-gate-less CMOS image sensor (CIS) with the high performance readout circuits will be presented. For achieving the low noise performance, the proposed pixel has two unique structures to reduce the parasitic capacitance of the floating diffusion (FD) node: 1) coupling capacitance between the transfer gate and FD node and 2) coupling capacitance between the reset gate and FD node, for removing parasitic capacitances around the FD node. As a result, the CIS with the proposed pixels is able to achieve a high pixel conversion gain of 220-μV/e- and a low read noise of 0.27e-rms using correlated multiple-sampling-based readout circuitry, so-called folding-integration/cyclic ADC. By using the developed low-noise CIS, the high contrast images with less than 0.3e-rms noise level have been successfully generated at an extremely low light level. This is the first proof of the photoelectron-counting-level images using the low-noise CIS without avalanche gain.

 

강연자 : 서민웅 / 시즈오카대학교

초청자 : 전기전자공학과 교수 채영철