Prof. Hyun Jae Kim's research team won the encouragement award at ‘The 2nd SK Hynix Semiconductor Innovation Idea Contest’ with the topic of oxide composition control technology to improve the performance of 3D NAND cell. They presented ‘a heterogeneous oxide thin film for the channel layer and a staggered oxide thin film for the tunneling layer in 3D NAND cell’. These ideas drastically reduced leakage current and process time & cost of the 3D NAND cell and improved the uniformity of the 3D NAND cells.

This idea was guided by Prof. Hyun Jae Kim and graduate students Young Jun Tak , Tae Soo Jung and Won-Gi Kim were awarded.